Share Email Print

Proceedings Paper

GaN-based light-emitting diodes by laser lift-off with electroplated copper
Author(s): Wun-Wei Lin; Lung-Chien Chen; Chung-An Chiou
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

This study presents a GaN thin film light-emitting diode (TF-LED) on an electroplated flexible copper substrate to improve thermal conduction effect of the LED. The optoelectronic characteristics and stress effect of the GaN TF-LEDs on the electroplated flexible copper prepared by laser lift-off technique was examined. The surface of the peeled GaN TF-LED after laser lift-off process demonstrated a pore array. The GaN pore array surface was etched by photo-electrochemical method to form hexagonal pyramid hillocks on the surface using KOH solution. Then, freestanding peeled GaN TF-LEDs with the front surface protected by wax were immersed into 3M KOH solution at 10, 20, 30min under ultraviolet illuminations to perform the photo-electrochemical etching. Surface morphologies with and without photo-electrochemical etching were observed by field emission scanning electron microscope (FESEM) (LEO 1530).

Paper Details

Date Published: 19 September 2013
PDF: 6 pages
Proc. SPIE 8818, Nanostructured Thin Films VI, 881815 (19 September 2013);
Show Author Affiliations
Wun-Wei Lin, National Taipei Univ. of Technology (Taiwan)
Lung-Chien Chen, National Taipei Univ. of Technology (Taiwan)
Chung-An Chiou, National Taipei Univ. of Technology (Taiwan)

Published in SPIE Proceedings Vol. 8818:
Nanostructured Thin Films VI
Tom G. Mackay; Akhlesh Lakhtakia; Yi-Jun Jen; Motofumi Suzuki, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?