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Proceedings Paper

Effect of side-surface passivation on the electrical properties of metal-Cd(Zn)Te-metal structures
Author(s): V. Sklyarchuk; P. Fochuk; Z. Zakharuk; R. Grill; V. Kutny; A. Rybka; D. Nakonechny; A. Zakharchenko; Ye. Nykoniuk; A. E. Bolotnikov; R. B. James
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Paper Abstract

We explored the influence of Cd(Zn)Te detectors on the detector’s dark current for different methods of contact formation and passivation of the side surfaces. Our findings suggest that the dark current of a homogeneous detector with ohmic contacts is limited by the detector’s resistivity and the operating voltage. Detectors with a rectifying barrier have a markedly lower dark current at the same voltage and contact geometry than those without such a barrier, and their sides have a larger space charge than those of untreated ones. The major factor lowering the detector’s dark current is the formation of a rectifying barrier that occurs while creating contacts to the detector; the role of passivation of the lateral surface in this case is minimal. However, passivation plays the main role in the formation of leakage current in homogeneous detectors with ohmic contacts, where the uniformity of the electric field is important inside the detector, or in other studies used for determining the bulk resistivity of the detector material. We formed a surface-barrier structure on a semi-insulating Cr-Cd(Zn)Te-Cr crystal (n-type) with a resistivity of 1010 Ohm-cm at room temperature. The measured leakage current of this detector was less than 3 nA at 1500 V. We discuss our findings on this detector’s structural properties.

Paper Details

Date Published: 26 September 2013
PDF: 8 pages
Proc. SPIE 8852, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XV, 88521I (26 September 2013); doi: 10.1117/12.2023879
Show Author Affiliations
V. Sklyarchuk, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
P. Fochuk, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
Z. Zakharuk, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
R. Grill, Institute of Single Crystals (Czech Republic)
V. Kutny, Kharkov Institute of Physics and Technology (Ukraine)
A. Rybka, Kharkov Institute of Physics and Technology (Ukraine)
D. Nakonechny, Kharkov Institute of Physics and Technology (Ukraine)
A. Zakharchenko, Kharkov Institute of Physics and Technology (Ukraine)
Ye. Nykoniuk, National Univ. of Water Management and Nature Resources Use (Ukraine)
A. E. Bolotnikov, Brookhaven National Lab. (United States)
R. B. James, Brookhaven National Lab. (United States)

Published in SPIE Proceedings Vol. 8852:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XV
Michael Fiederle; Arnold Burger; Larry Franks; Ralph B. James, Editor(s)

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