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Proceedings Paper

A new mask linearity specification for EUV masks based on time dependent dielectric breakdown requirements
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Paper Abstract

When compared to conventional chrome absorber masks, electron beam patterning of EUV masks requires additional corrections to account for intermediate range electron backscattering from the mirror and tantalum based absorber layers. The performance of this Mask Proximity Correction software should not be specified based solely on traditional mask linearity measures. We propose a new mask linearity specification based on Time Dependent Dielectric Breakdown requirements for metal layers.

Paper Details

Date Published: 9 September 2013
PDF: 7 pages
Proc. SPIE 8880, Photomask Technology 2013, 88801M (9 September 2013); doi: 10.1117/12.2023109
Show Author Affiliations
Keith Standiford, GLOBALFOUNDRIES Inc. (United States)
Christian Bürgel, Advanced Mask Technology Ctr. GmbH Co. KG (Germany)

Published in SPIE Proceedings Vol. 8880:
Photomask Technology 2013
Thomas B. Faure; Paul W. Ackmann, Editor(s)

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