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Proceedings Paper

Simulation of scattering effects in photolithography
Author(s): A. J. W. Tol; Graeme D. Maxwell; H. Paul Urbach; Robert Jan Visser
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Paper Abstract

Using a new program based on Maxwell''s equations which computes the latent image of relative inhibitor concentration in two dimensions we have investigated notching effects in a resist layer on non-planar substrates and were able to understand line-narrowing effects which were experimentally observed. The program properly takes into account oblique propagation of light rays (in particular reflections from nonplanar interfaces) effects due to defocus and the partial coherence of the illumination. Thicknesses and layout of the underlying layers were varied in order to determine which parts of the structure give rise to the notching problems. The results which would be prohibitively laborious to obtain experimentally can be used to narrow down the range of possible solutions to the reflection problem. Some situations are however amenable to experimentation. In order to find the optimum resist for making the desired structures with minimum line narrowing over topography the A and B parameters of the resist were varied. The simulation results are compared to experimentally obtained profiles.

Paper Details

Date Published: 1 June 1990
PDF: 15 pages
Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); doi: 10.1117/12.20223
Show Author Affiliations
A. J. W. Tol, Philips Research Labs. (Netherlands)
Graeme D. Maxwell, Philips Research Labs. (Netherlands)
H. Paul Urbach, Philips Research Labs. (Netherlands)
Robert Jan Visser, Philips Research Labs. (Netherlands)

Published in SPIE Proceedings Vol. 1264:
Optical/Laser Microlithography III
Victor Pol, Editor(s)

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