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Proceedings Paper

Effects of quantum efficiency on PbSe/PbSrSe multiple quantum well structures
Author(s): M. Khodr
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Paper Abstract

The effects of quantum efficiency on PbSe/Pb0.934Sr0.066 Se multiple Quantum well Structure were analyzed. We calculate and identify the critical design parameters required to optimize and study the MQW system as a function of five temperatures assuming the quantum efficiency is not equal to one and hence we include the effects of nonradiative recombination due to Auger recombination and carrier leakage over the barrier into the confinement layers. Inclusion of quantum efficiency in addition to temperature dependence increased the threshold current values by almost 10 times. Also, it was noticed that the threshold current density values dropped fast at small cavities and remained constant after some critical cavity length around 100 μm. When experimental quantum efficiency values were used, the threshold current values were higher than those found using the theoretical quantum efficiency values due to leakage current over the barrier.

Paper Details

Date Published: 26 September 2013
PDF: 8 pages
Proc. SPIE 8816, Nanoengineering: Fabrication, Properties, Optics, and Devices X, 88160P (26 September 2013); doi: 10.1117/12.2022336
Show Author Affiliations
M. Khodr, American Univ. of Ras Al Khaimah (United Arab Emirates)

Published in SPIE Proceedings Vol. 8816:
Nanoengineering: Fabrication, Properties, Optics, and Devices X
Eva M. Campo; Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

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