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Proceedings Paper

Considering Babinet principle for optical lithography resolution limit exceeding classical resolving power
Author(s): Mircea V. Dusa; Dan V. Nicolau; Florin Fulga
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Paper Abstract

A point of view concerning optical lithography resolution limit when moving into submicron domain is proposed. This is intended as a reevaluation of the classical resolving power definition considering not only the apperture (pattern) size but also its polarity and aspect ratio. Printing of aperture with opposite polarities is described in terms of Babinet Principle a theorem concerning distribution of light diffracted by complementary screens. Validity of the Babinet Principle is verified for optical image intensity profiles obtained from complementary appertures illuminated in aftimage Reversal process as well as for final resist " opaque" and " window" patterns. Experiments made with a test reticle having 1D/2D structures in two polarities establish a possible validity range for Babinet Principle in optical lithography and a consequent resolution limit of 0. 5 0. 6 microns. 1.

Paper Details

Date Published: 1 June 1990
PDF: 9 pages
Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); doi: 10.1117/12.20220
Show Author Affiliations
Mircea V. Dusa, ICCE/CCSIT-CE Bucuresti (Romania)
Dan V. Nicolau, ICCE/CCSIT-CE Bucuresti (Romania)
Florin Fulga, ICCE/CCSIT-CE Bucuresti (Romania)

Published in SPIE Proceedings Vol. 1264:
Optical/Laser Microlithography III
Victor Pol, Editor(s)

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