Share Email Print

Proceedings Paper

Deep-UV wafer stepper with through-the-lens wafer to reticle alignment
Author(s): Stefan Wittekoek; Martin A. van den Brink; Henk F.D. Linders; Judon M. D. Stoeldraijer; J. W.D. Martens; Douglas R. Ritchie
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

A new excimer laser stepper at 248 nm wavelength Is described wilti an all quartz 5x reduction lens with NA 0. 42 and 21 . 2 mm field size. Design aspects and experimental data are reported. A key feature of the system is a ilL alignment system with direct referencing of reticle to wafer operating at 633 nm The problem of the large focal plane difference beiween exposure and alignment wavelength is solved by special correcflon oplics in the lens. The introducflon of exclmer lasers as new light sources for produclion optical lithography has been facilitated by a flexible optical interface beiween laser and stepper and by an on line calibrafion system to control the laser wavelength. Experimental results for resolution and overlay performance are gtven. 1 .

Paper Details

Date Published: 1 June 1990
PDF: 14 pages
Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); doi: 10.1117/12.20207
Show Author Affiliations
Stefan Wittekoek, ASM-Lithography, B.V. (Netherlands)
Martin A. van den Brink, ASM-Lithography, B.V. (Netherlands)
Henk F.D. Linders, ASM-Lithography, B.V. (Netherlands)
Judon M. D. Stoeldraijer, ASM-Lithography, B.V. (Netherlands)
J. W.D. Martens, ASM-Lithography, B.V. (Netherlands)
Douglas R. Ritchie, ASM-Lithography, B.V. (Netherlands)

Published in SPIE Proceedings Vol. 1264:
Optical/Laser Microlithography III
Victor Pol, Editor(s)

© SPIE. Terms of Use
Back to Top