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Proceedings Paper

Metrology for adhesive layer of temporary bonding wafers using IR interferometry
Author(s): Po-Yi Chang; Yi-Sha Ku; Chia-Hung Cho
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Paper Abstract

We have demonstrated a full-field IR wavelength scanning interferometry system for the adhesive thickness measurement which in between the temporary bonded wafer and a carrier wafer. The illumination wavelength can be varied and selected by tilting the angle of interference filter along the main optical axis. The varying wavelength was calibrated by a commercial spectrometer. By combining the phase-shifting technique and the spectrum curve fitting method, the total thickness variation (TTV) of the adhesive layer and the adhesive thickness distribution map can be obtained. The experimental results showed that the TTV of the adhesive is 3.76 μm within the area of 110 mm diameter. The thickness variation is in a range from 16.47 μm to 20.23μm.

Paper Details

Date Published: 13 May 2013
PDF: 6 pages
Proc. SPIE 8788, Optical Measurement Systems for Industrial Inspection VIII, 878804 (13 May 2013); doi: 10.1117/12.2020437
Show Author Affiliations
Po-Yi Chang, Industrial Technology Research Institute (Taiwan)
Yi-Sha Ku, Industrial Technology Research Institute (Taiwan)
Chia-Hung Cho, Industrial Technology Research Institute (Taiwan)

Published in SPIE Proceedings Vol. 8788:
Optical Measurement Systems for Industrial Inspection VIII
Peter H. Lehmann; Wolfgang Osten; Armando Albertazzi, Editor(s)

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