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Proceedings Paper

Infrared enhanced detection for laser imaging and biometrics
Author(s): M. U. Pralle; J. E. Carey; H. Homayoon; J. Sickler; X. Li; J. Jiang; F. Sahebi; C. Palsule; J. McKee
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Paper Abstract

SiOnyx has developed infrared enhanced CMOS image sensors leveraging a proprietary ultrafast laser semiconductor process technology. This technology demonstrates 10 fold improvements in infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Furthermore, these sensitivity enhancements are achieved on a focal plane with state of the art noise performance of 2 electrons/pixel. The focal plane is color enabled but high transmission of near infrared light allows for near infrared imaging from 850 to 1200 as well. The quantum efficiency enhancements have significant performance benefits in imaging 1064nm laser light as well as 850nm imaging of iris signatures for improved biometric identification.

Paper Details

Date Published: 23 May 2013
PDF: 7 pages
Proc. SPIE 8734, Active and Passive Signatures IV, 87340H (23 May 2013); doi: 10.1117/12.2020291
Show Author Affiliations
M. U. Pralle, SiOnyx, Inc. (United States)
J. E. Carey, SiOnyx, Inc. (United States)
H. Homayoon, SiOnyx, Inc. (United States)
J. Sickler, SiOnyx, Inc. (United States)
X. Li, SiOnyx, Inc. (United States)
J. Jiang, SiOnyx, Inc. (United States)
F. Sahebi, SiOnyx, Inc. (United States)
C. Palsule, SiOnyx, Inc. (United States)
J. McKee, SiOnyx, Inc. (United States)

Published in SPIE Proceedings Vol. 8734:
Active and Passive Signatures IV
G. Charmaine Gilbreath; Chadwick Todd Hawley, Editor(s)

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