In this work, we report metrology solutions using scatterometry Optical Critical Dimension (OCD) characterization on two advanced CMOS devices: novel n-channel gate-last In_0.53Ga_0.47As FinFET with self-aligned Molybdenum (Mo) contacts and p-channel Ge FinFET formed on Germanium-on-Insulator (GOI) substrate. Key critical process steps during the fabrication of these advanced transistors were identified for process monitor using scatterometry OCD measurement to improve final yield. Excellent correlation with reference metrology and high measurement precision were achieved by using OCD characterization, confirming scatterometry OCD as a promising metrology technique for next generation device applications. In addition, we also further explore OCD characterization using normal incidence spectroscopic reflectometry (SR), oblique incidence spectroscopic ellipsometry (SE), and combined SR+SE technologies. The combined SR+SE approach was found to provide better precision.

Date Published: 13 May 2013
PDF: 9 pages
Proc. SPIE 8788, Optical Measurement Systems for Industrial Inspection VIII, 87881R (13 May 2013); doi: 10.1117/12.2020248

Published in SPIE Proceedings Vol. 8788:
Optical Measurement Systems for Industrial Inspection VIII
Peter H. Lehmann; Wolfgang Osten; Armando Albertazzi, Editor(s)