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Proceedings Paper

Fast integrated optoelectronic photo detector on silicon with a fiber coupling structure
Author(s): Dieter Zurhelle; Rainer Hoffmann; Joerg Mueller
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Paper Abstract

In the course of the growing complexity of computer and communication networks and the corresponding high data rates which have to be distributed within isolated and between communicating systems, optical fibers and the corresponding optoelectrical receivers are widely used. Until now these components are usually added to the IC-network. With the increasing number of such OE-internets an integration of the fiber-detector coupling into the integrated circuits would be advantageous. This paper presents the realization and the results of a fiber-detector coupling structure fabricated in a technology which is compatible with C- MOS or BIC-MOS technology. The deep (approximately equals 65 micrometers ) trench for the fiber is fabricated by an anisotropic plasma etching process using a photo resist mask. This process has an accuracy of +/- 0.5 micrometers in lateral and vertical direction, which is necessary for the coupling of monomode fibers, and an etching rate of up to 15 micrometers /h. The PIN-photo diode can be fabricated both laterally and vertically orientated as part of standard C-MOS, BIC-MOS or bipolar processes. The diode exhibits a cut-off frequency exceeding 400 MHz at a capacitance of less than 1 pF and a high coupling efficiency of more than 70% for wavelength below 1.1 micrometers due to a lateral injection of the photons into the active area of the detector.

Paper Details

Date Published: 22 February 1995
PDF: 9 pages
Proc. SPIE 2449, Fiber Optic Network Components, (22 February 1995); doi: 10.1117/12.201987
Show Author Affiliations
Dieter Zurhelle, Technische Univ. Hamburg-Harburg (Germany)
Rainer Hoffmann, Technische Univ. Hamburg-Harburg (Germany)
Joerg Mueller, Technische Univ. Hamburg-Harburg (Germany)

Published in SPIE Proceedings Vol. 2449:
Fiber Optic Network Components
S. Iraj Najafi; Henri Porte, Editor(s)

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