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Proceedings Paper

0.5-um photolithography using high-numerical-aperture I-line wafer steppers
Author(s): William H. Arnold; Anna Maria Minvielle; Khoi A. Phan; Bhanwar Singh; Michael K. Templeton
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Paper Abstract

Results are presented from a new high numerical aperture (NA 0. 48) iline 5X reduction lens which resolves 0. 5 micron lines and spaces over greater than 1 micron depth of focus in several commercially available i-line resists. The performance of this lens is contrasted with that of a NA 0. 40 i-line lens. The NA 0. 40 lens has better depth of focus for 0. 7 microns lines and spaces (L/S) and larger while the NA 0. 48 lens has better depth of focus for L/S smaller than 0. 7 microns down to a resolution cutoff near 0. 35 micron L/S. Other characteristics of the lens such as its relative insensitivity to absorption heating effects and its behavior as a function of the overpressure of He gas within the lens are explored. Simulation work suggests that a NA of between 0. 5 and 0. 55 is optimum for printing 0. 5 micron L/S. Further it suggests that there may be sufficient depth of focus at 0. 4 micron L/S to make i-line a competitor to DUV lithography for the 64 Mbit DRAM generation. 1.

Paper Details

Date Published: 1 June 1990
PDF: 16 pages
Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); doi: 10.1117/12.20184
Show Author Affiliations
William H. Arnold, Advanced Micro Devices, Inc. (United States)
Anna Maria Minvielle, Advanced Micro Devices, Inc. (United States)
Khoi A. Phan, Advanced Micro Devices, Inc. (United States)
Bhanwar Singh, Advanced Micro Devices, Inc. (United States)
Michael K. Templeton, Advanced Micro Devices, Inc. (United States)

Published in SPIE Proceedings Vol. 1264:
Optical/Laser Microlithography III
Victor Pol, Editor(s)

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