
Proceedings Paper
140-220 GHz imaging front-end based on 250nm InP/InGaAs/InP DHBT processFormat | Member Price | Non-Member Price |
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Paper Abstract
This paper presents a pre-amplified detector receiver based on a 250 nm InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) process available from the Teledyne scientific. The front end consists of a double slot antenna followed by a five stage low noise amplifier and a detector, all integrated onto the same circuit. Results of measured responsivity and noise are presented. The receiver is characterized through measuring its response to hot (293) and cold (78) K terminations. Measurements of the voltage noise spectrum at the video output of the receiver are presented and can be used to derive the temperature resolution of the receiver for a specific video bandwidth.
Paper Details
Date Published: 31 May 2013
PDF: 10 pages
Proc. SPIE 8715, Passive and Active Millimeter-Wave Imaging XVI, 871502 (31 May 2013); doi: 10.1117/12.2018397
Published in SPIE Proceedings Vol. 8715:
Passive and Active Millimeter-Wave Imaging XVI
David A. Wikner; Arttu R. Luukanen, Editor(s)
PDF: 10 pages
Proc. SPIE 8715, Passive and Active Millimeter-Wave Imaging XVI, 871502 (31 May 2013); doi: 10.1117/12.2018397
Show Author Affiliations
V. Vassilev, Chalmers Univ. of Technology (Sweden)
H. Zirath, Chalmers Univ. of Technology (Sweden)
V. Furtula, Chalmers Univ. of Technology (Sweden)
H. Zirath, Chalmers Univ. of Technology (Sweden)
V. Furtula, Chalmers Univ. of Technology (Sweden)
Y. Karandikar, Chalmers Univ. of Technology (Sweden)
K. Eriksson, Chalmers Univ. of Technology (Sweden)
K. Eriksson, Chalmers Univ. of Technology (Sweden)
Published in SPIE Proceedings Vol. 8715:
Passive and Active Millimeter-Wave Imaging XVI
David A. Wikner; Arttu R. Luukanen, Editor(s)
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