A dual hard mask concept for high resolution patterning has been evaluated with focus on highly selective etching processes for semiconductor manufacturing. The integration of thin SiO₂ and ZrO₂ hard mask materials enables highly selective patterning via plasma etch processes for future technology nodes. The patterning sequence is demonstrated for hole arrays with sizes down to 25 nm using a 50 nm thin resist which leads to the fabrication of trenches in silicon with aspect ratios up to 20:1. Alternative ZrO₂ based materials were investigated with focus on surface roughness reduction since it influences the final line etch roughness. Here Si-doped ZrO₂ (ALD) and spin-coatable ZrO₂ were compared to the pure and crystalline ZrO₂ as main selective material.

Date Published: 29 March 2013
PDF: 11 pages
Proc. SPIE 8685, Advanced Etch Technology for Nanopatterning II, 86850V (29 March 2013); doi: 10.1117/12.2018247

Published in SPIE Proceedings Vol. 8685:
Advanced Etch Technology for Nanopatterning II
Ying Zhang; Gottlieb S. Oehrlein; Qinghuang Lin, Editor(s)