Proceedings Paper
Electron dose reduction through improved adhesion by cationic organic material with HSQ resist on an InGaAs multilayer system on GaAs substrate| Format | Member Price | Non-Member Price |
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Paper Abstract
This paper presents the findings of a cationic surface active agent used to promote adhesion on an InGaAs multilayer system on GaAs. The improved adhesion of the HSQ resist allowed the electron exposure dose to be reduced by a factor of four, and enabled the production of features sizes down to 30nm. Moreover, the process latitude is greatly increased for both small and large lithographic features.
Paper Details
Date Published: 29 March 2013
PDF: 7 pages
Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86821Z (29 March 2013); doi: 10.1117/12.2018121
Published in SPIE Proceedings Vol. 8682:
Advances in Resist Materials and Processing Technology XXX
Mark H. Somervell, Editor(s)
PDF: 7 pages
Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86821Z (29 March 2013); doi: 10.1117/12.2018121
Show Author Affiliations
Wilfried Erfurth, Max-Planck-Institut für Mikrostrukturphysik (Germany)
Andrew Thompson, DisChem, Inc. (United States)
Andrew Thompson, DisChem, Inc. (United States)
Nezih Ünal, GenISys GmbH (Germany)
Published in SPIE Proceedings Vol. 8682:
Advances in Resist Materials and Processing Technology XXX
Mark H. Somervell, Editor(s)
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