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Proceedings Paper

Phase-shifting mask and FLEX method for advanced photolithography
Author(s): Hiroshi Fukuda; Akira Imai; Shinji Okazaki
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Paper Abstract

Practical resolution the minimum feature size with a depth of focus (DOF) required for LSI fabrication process is analysed. Analysis is based on the calculated optical image characteristics and experimentally obtained image quality criterion for pattern delineation. It is found that practical resolution is not improved but may even be degraded with increasing NA and/or shortening wavelength. This means that the high resolution capability of advanced optical systems cannot be effectively utilized in actual fabrication of future LSIs if conventional optical lithography is used. To overcome this limitation the effectiveness of advanced image formation techniques the phaseshifting method and the FLEX method are investigated. It is shown that these techniques make it possible to overcome the limitations of conventional optical lithography. 1.

Paper Details

Date Published: 1 June 1990
PDF: 12 pages
Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); doi: 10.1117/12.20176
Show Author Affiliations
Hiroshi Fukuda, Hitachi, Ltd. (Japan)
Akira Imai, Hitachi, Ltd. (Japan)
Shinji Okazaki, Hitachi, Ltd. (Japan)

Published in SPIE Proceedings Vol. 1264:
Optical/Laser Microlithography III
Victor Pol, Editor(s)

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