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Proceedings Paper

MEMS sensors for mm-range displacement measurements with sub-nm resolution
Author(s): Vladimir T. Stavrov; Vencislav M. Todorov; Assen A. Shulev; Chavdar M. Hardalov
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Paper Abstract

It is challenging to provide contact measurements of travel in mm-range with nm/sub-nm resolution. It is even more complex to perform such measurements in static regime. In order to respond to the need for a simple, reliable and costeffective tool for contact travel measurements in mm-range with nm/sub-nm resolution, test MEMS sensor with sidewall embedded piezoresistors have been developed. The sensor comprises of two outer members having thickness of 270μm and two symmetrical sets of in-plane compliant elements: differential springs and displacement detection cantilevers, having thickness of 12μm. The MEMS devices have been bonded directly on low-noise amplifier PCB. For detailed characterization of the sensors in mm-travel range, two different experimental setups have been used. Measurements of 0.6 mm travel range at 1nm resolution have been demonstrated experimentally.

Paper Details

Date Published: 17 May 2013
PDF: 6 pages
Proc. SPIE 8763, Smart Sensors, Actuators, and MEMS VI, 87632G (17 May 2013); doi: 10.1117/12.2017381
Show Author Affiliations
Vladimir T. Stavrov, AMG Technology Ltd. (Bulgaria)
Vencislav M. Todorov, Techproject (Austria)
Assen A. Shulev, Institute of Mechanics (Bulgaria)
Chavdar M. Hardalov, Sofia Technical Univ. (Bulgaria)

Published in SPIE Proceedings Vol. 8763:
Smart Sensors, Actuators, and MEMS VI
Ulrich Schmid; José Luis Sánchez de Rojas Aldavero; Monika Leester-Schaedel, Editor(s)

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