It is challenging to provide contact measurements of travel in mm-range with nm/sub-nm resolution. It is even more complex to perform such measurements in static regime. In order to respond to the need for a simple, reliable and costeffective tool for contact travel measurements in mm-range with nm/sub-nm resolution, test MEMS sensor with sidewall embedded piezoresistors have been developed. The sensor comprises of two outer members having thickness of 270μm and two symmetrical sets of in-plane compliant elements: differential springs and displacement detection cantilevers, having thickness of 12μm. The MEMS devices have been bonded directly on low-noise amplifier PCB. For detailed characterization of the sensors in mm-travel range, two different experimental setups have been used. Measurements of 0.6 mm travel range at 1nm resolution have been demonstrated experimentally.

Date Published: 17 May 2013
PDF: 6 pages
Proc. SPIE 8763, Smart Sensors, Actuators, and MEMS VI, 87632G (17 May 2013); doi: 10.1117/12.2017381

Published in SPIE Proceedings Vol. 8763:
Smart Sensors, Actuators, and MEMS VI
Ulrich Schmid; José Luis Sánchez de Rojas Aldavero; Monika Leester-Schaedel, Editor(s)