Share Email Print

Proceedings Paper

Noise characteristics of nanoscaled SOI MOSFETs
Author(s): Nataliya Lukyanchikova; Nikolay Garbar; Valeriya Kudina; Alexander Smolanka; Eddy Simoen; Cor Claeys
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The low-frequency noise behavior of nanoscaled fully-depleted silicon-on insulator (SOI) finFETs is investigated and the perspectives of the noise method as a non-destructive diagnostic tool are revealed. The analysis of the (1/f)γ McWhorter noise observed at zero back-gate voltage showed that the trap concentration Not appears to be lower in the case of devices with HfSiON/SiO2 gate dielectric with the uniaxial strain in the inversion channel while the implementation of the HfO2/SiO2 gate stack and the biaxial strain tend to increase the value of Not. The analysis of the back-gate-induced (BGI) and linear kink effect (LKE) Lorentzian noise observed when the back interface is biased in accumulation allowed to estimate the values proportional to equivalent capacitance Ceq. Their front-gate voltage dependencies appear to be different for the devices with HfSiON/SiO2 and HfO2/SiO2 gate dielectric. Also the values proportional to density of the electron-valence-band tunneling currents jEVB were found for the devices studied. The influence of the strain-inducing techniques and gate dielectric type on the values discussed is revealed.

Paper Details

Date Published: 8 January 2013
PDF: 11 pages
Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000N (8 January 2013); doi: 10.1117/12.2017358
Show Author Affiliations
Nataliya Lukyanchikova, V. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Nikolay Garbar, V. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Valeriya Kudina, V. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Alexander Smolanka, V. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Eddy Simoen, IMEC (Belgium)
Cor Claeys, IMEC (Belgium)
Katholieke Univ. Leuven (Belgium)

Published in SPIE Proceedings Vol. 8700:
International Conference Micro- and Nano-Electronics 2012
Alexander A. Orlikovsky, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?