The low-frequency noise behavior of nanoscaled fully-depleted silicon-on insulator (SOI) finFETs is investigated and the perspectives of the noise method as a non-destructive diagnostic tool are revealed. The analysis of the (1/f)^γ McWhorter noise observed at zero back-gate voltage showed that the trap concentration N_ot appears to be lower in the case of devices with HfSiON/SiO₂ gate dielectric with the uniaxial strain in the inversion channel while the implementation of the HfO₂/SiO₂ gate stack and the biaxial strain tend to increase the value of N_ot. The analysis of the back-gate-induced (BGI) and linear kink effect (LKE) Lorentzian noise observed when the back interface is biased in accumulation allowed to estimate the values proportional to equivalent capacitance C_eq. Their front-gate voltage dependencies appear to be different for the devices with HfSiON/SiO₂ and HfO₂/SiO₂ gate dielectric. Also the values proportional to density of the electron-valence-band tunneling currents j_EVB were found for the devices studied. The influence of the strain-inducing techniques and gate dielectric type on the values discussed is revealed.

Date Published: 8 January 2013
PDF: 11 pages
Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000N (8 January 2013); doi: 10.1117/12.2017358

Published in SPIE Proceedings Vol. 8700:
International Conference Micro- and Nano-Electronics 2012
Alexander A. Orlikovsky, Editor(s)