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Proceedings Paper

Silicon nitride waveguide with flattened chromatic dispersion
Author(s): J. M. Chavez Boggio; D. Bodenmueller; T. Fremberg; R. Haynes; M. M. Roth; R. Eisermann; L. Zimmermann; M. Bohm
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Paper Abstract

Dispersion engineering in integrated silicon nitride waveguides is numerically and experimentally investigated. We show that by modifying the transversal dimensions of the silicon nitride core, it is possible to have a good control of the chromatic dispersion. The inaccuracies due to typical fabrication process in PECD-SiXNY films shows that the dispersion uncertainty is in the order of 20 ps/nm-km at 1550 nm. Silicon nitride waveguides were then fabricated using the same PECVD process and the chromatic dispersion was measured using a low-coherence frequency domain interferometry technique. A comparison between measurements and simulations shows good agreement.

Paper Details

Date Published: 8 May 2013
PDF: 6 pages
Proc. SPIE 8772, Nonlinear Optics and Applications VII, 87720R (8 May 2013); doi: 10.1117/12.2017302
Show Author Affiliations
J. M. Chavez Boggio, Leibniz-Institut für Astrophysik Potsdam (Germany)
D. Bodenmueller, Leibniz-Institut für Astrophysik Potsdam (Germany)
T. Fremberg, Leibniz-Institut für Astrophysik Potsdam (Germany)
R. Haynes, Leibniz-Institut für Astrophysik Potsdam (Germany)
M. M. Roth, Leibniz-Institut für Astrophysik Potsdam (Germany)
R. Eisermann, Leibniz-Institut für Astrophysik Potsdam (Germany)
L. Zimmermann, Leibniz-Institut für innovative Mikroelektronik (Germany)
M. Bohm, Univ. of Potsdam (Germany)

Published in SPIE Proceedings Vol. 8772:
Nonlinear Optics and Applications VII
Mario Bertolotti; Joseph Haus; Alexei M. Zheltikov, Editor(s)

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