Dispersion engineering in integrated silicon nitride waveguides is numerically and experimentally investigated. We show that by modifying the transversal dimensions of the silicon nitride core, it is possible to have a good control of the chromatic dispersion. The inaccuracies due to typical fabrication process in PECD-Si_XN_Y films shows that the dispersion uncertainty is in the order of 20 ps/nm-km at 1550 nm. Silicon nitride waveguides were then fabricated using the same PECVD process and the chromatic dispersion was measured using a low-coherence frequency domain interferometry technique. A comparison between measurements and simulations shows good agreement.

Date Published: 8 May 2013
PDF: 6 pages
Proc. SPIE 8772, Nonlinear Optics and Applications VII, 87720R (8 May 2013); doi: 10.1117/12.2017302

Published in SPIE Proceedings Vol. 8772:
Nonlinear Optics and Applications VII
Mario Bertolotti; Joseph Haus; Alexei M. Zheltikov, Editor(s)