
Proceedings Paper
Hydrogenated amorphous silicon nanowires with high nonlinear figure of merit and stable nonlinear optical responseFormat | Member Price | Non-Member Price |
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Paper Abstract
The nonlinear characteristics of hydrogenated amorphous silicon nanowires are experimentally measured. A nonlinear coefficient, γ, with a high real part Real(γ)= 690W-1m-1, combined with a low imaginary part Im(γ)= 10 W-1m-1, resulted in a high nonlinear FOM of 5.5. Furthermore, systematic studies over hours of operational time under 2.2W of pulse peak power revealed no degradation of the optical response.
Paper Details
Date Published: 22 May 2013
PDF: 8 pages
Proc. SPIE 8767, Integrated Photonics: Materials, Devices, and Applications II, 876706 (22 May 2013); doi: 10.1117/12.2017296
Published in SPIE Proceedings Vol. 8767:
Integrated Photonics: Materials, Devices, and Applications II
Jean-Marc Fédéli; Laurent Vivien; Meint K. Smit, Editor(s)
PDF: 8 pages
Proc. SPIE 8767, Integrated Photonics: Materials, Devices, and Applications II, 876706 (22 May 2013); doi: 10.1117/12.2017296
Show Author Affiliations
L. Carletti, Univ. de Lyon, Institut des Nanotechnologies de Lyon, Ecole Centrale de Lyon (France)
C. Grillet, Univ. de Lyon, Institut des Nanotechnologies de Lyon, Ecole Centrale de Lyon (France)
The Univ. of Sydney (Australia)
P. Grosse, CEA-Leti (France)
B. Ben Bakir, CEA-Leti (France)
C. Grillet, Univ. de Lyon, Institut des Nanotechnologies de Lyon, Ecole Centrale de Lyon (France)
The Univ. of Sydney (Australia)
P. Grosse, CEA-Leti (France)
B. Ben Bakir, CEA-Leti (France)
S. Menezo, CEA-Leti (France)
J. M. Fédéli, CEA-Leti (France)
D. J. Moss, The Univ. of Sydney (Australia)
C. Monat, Univ. de Lyon, Institut des Nanotechnologies de Lyon, Ecole Centrale de Lyon (France)
J. M. Fédéli, CEA-Leti (France)
D. J. Moss, The Univ. of Sydney (Australia)
C. Monat, Univ. de Lyon, Institut des Nanotechnologies de Lyon, Ecole Centrale de Lyon (France)
Published in SPIE Proceedings Vol. 8767:
Integrated Photonics: Materials, Devices, and Applications II
Jean-Marc Fédéli; Laurent Vivien; Meint K. Smit, Editor(s)
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