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Proceedings Paper

Formation of nanoelectrodes for high temperature single-electron sensors
Author(s): A. A. Parshintsev; E. S. Soldatov
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Paper Abstract

To create a molecular transistor, that is capable to operate in single-electron regime at room temperature, nanogap of several nanometers between electrodes is needed. Such nanogaps can be obtained by electromigration. In this work the technique of the creation of nanowire samples suitable for electromigration is described. Nanowires were formed on a substrate without buffer metallic layer to provide best conditions for electromigration process.

Paper Details

Date Published: 8 January 2013
PDF: 5 pages
Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000B (8 January 2013); doi: 10.1117/12.2017239
Show Author Affiliations
A. A. Parshintsev, Moscow State Univ. (Russian Federation)
E. S. Soldatov, Moscow State Univ. (Russian Federation)

Published in SPIE Proceedings Vol. 8700:
International Conference Micro- and Nano-Electronics 2012
Alexander A. Orlikovsky, Editor(s)

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