The objective of this work is to study the possibility of implementing SOI rectennas for UWB RFIDs, with undoped Double Gate MOSFETs (DG-MOSFETs). For that purpose we use two commercial TCAD tools: Sentaurus Device (created by Synopsys), and ADS (created by Agilent) where in a large signal circuit model derived for the transistors is implemented with Verilog-A. Once the DG-MOSFETs output characteristics are fit, the rectennas performance at high frequencies is simulated; numerical and electrical results are successfully compared.

Date Published: 28 May 2013
PDF: 8 pages
Proc. SPIE 8764, VLSI Circuits and Systems VI, 876404 (28 May 2013); doi: 10.1117/12.2017149

Published in SPIE Proceedings Vol. 8764:
VLSI Circuits and Systems VI
Teresa Riesgo; Massimo Conti, Editor(s)