Share Email Print

Proceedings Paper

Rectennas design using DG-MOSFETs
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The objective of this work is to study the possibility of implementing SOI rectennas for UWB RFIDs, with undoped Double Gate MOSFETs (DG-MOSFETs). For that purpose we use two commercial TCAD tools: Sentaurus Device (created by Synopsys), and ADS (created by Agilent) where in a large signal circuit model derived for the transistors is implemented with Verilog-A. Once the DG-MOSFETs output characteristics are fit, the rectennas performance at high frequencies is simulated; numerical and electrical results are successfully compared.

Paper Details

Date Published: 28 May 2013
PDF: 8 pages
Proc. SPIE 8764, VLSI Circuits and Systems VI, 876404 (28 May 2013); doi: 10.1117/12.2017149
Show Author Affiliations
Raúl Rodríguez, Univ. de Las Palmas de Gran Canaria (Spain)
B. González, Univ. de Las Palmas de Gran Canaria (Spain)
J. García, Univ. de Las Palmas de Gran Canaria (Spain)
M. Marrero-Martín, Univ. de Las Palmas de Gran Canaria (Spain)
A. Hernández, Univ. de Las Palmas de Gran Canaria (Spain)

Published in SPIE Proceedings Vol. 8764:
VLSI Circuits and Systems VI
Teresa Riesgo; Massimo Conti, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?