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Proceedings Paper

Metrology for gold absorber/silicon membrane x-ray reticles
Author(s): Bernard J. Dardzinski; Robert Allen Grant; Daniel D. Ball
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Paper Abstract

SEM metrology is used to characterizecritical dimension (CD)controlandprocess bias in x-ray reticle fabrication. The pattern transfer bias between the single layer resist stencil and'the electroplated absorber is investigated. This bias includes the resist sidewall angle, the accuracy of the SEM edge detection algorithm, and the wet chemical etchants used to delineate the absorberpattern. It is a well known fact that the resist geometry plays an importantrole in producing the final absorber structure. Thispaperexplores theeffects ofresistprofilesand subsequentprocessing steps on critical dimension control of the absorber layer.

Paper Details

Date Published: 1 May 1990
PDF: 10 pages
Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); doi: 10.1117/12.20171
Show Author Affiliations
Bernard J. Dardzinski, Hampshire Instruments, Inc. (United States)
Robert Allen Grant, Hampshire Instruments, Inc. (United States)
Daniel D. Ball, Hampshire Instruments, Inc. (United States)

Published in SPIE Proceedings Vol. 1263:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX
Douglas J. Resnick, Editor(s)

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