Electrodes for molecular transistor with the gaps between them within 5 nm width’s range were created. On the first step suspended electrodes-blanks with 30 nm gaps was fabricated with a standard bilayer mask technology and electron beam lithography. Then wet etching in a 6% solution of hydrofluoricacid buffered with hydrofluoride of ammonium makes possible to suspend these electrodes to prevent them from short-circuit at the step of additional evaporation of metal film. The efficiency of narrowing of the gap between source and drain electrodes (as a result of additional deposition of metal film on the preformed and suspended gap) was 50-70% of the deposited film thickness.

Date Published: 8 January 2013
PDF: 6 pages
Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000O (8 January 2013); doi: 10.1117/12.2017090

Published in SPIE Proceedings Vol. 8700:
International Conference Micro- and Nano-Electronics 2012
Alexander A. Orlikovsky, Editor(s)