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Copper germanium alloys formation by the low temperature atomic hydrogen treatment
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Paper Abstract

The influence of atomic hydrogen treatment on two-layer thin-film Cu/Ge system deposited on i-GaAs substrate was investigated. It was established that the treatment in an atomic hydrogen flow with density 1015 at./(cm2•s) at a room temperature for 5 min results the solid state interdiffusion of Cu and Ge thin films and polycrystalline CuGe alloy formation with the vertically oriented grains.

Paper Details

Date Published: 3 January 2013
PDF: 5 pages
Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 870005 (3 January 2013); doi: 10.1117/12.2016882
Show Author Affiliations
Artyom I. Kazimirov, Tomsk State Univ. of Control Systems and Radioelectronics (Russian Federation)
Evgeny V. Erofeev, Micran (Russian Federation)
Valery A. Kagadei, Micran (Russian Federation)

Published in SPIE Proceedings Vol. 8700:
International Conference Micro- and Nano-Electronics 2012
Alexander A. Orlikovsky, Editor(s)

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