Proceedings Paper
Laser pulse crystallization and optical properties of Si/SiO2 and Si/Si3N4 multilayer nano-heterostructures| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
Furnace annealing, cw- and pulse laser treatments were applied for crystallization of amorphous Si nano-layers and Si nanoclusters in SiNx-Si3N4 and Si-SiO2 multilayer nanostructures. The as-deposited and annealed structures were studied using optical methods and electron microscopy techniques. The influence of hydrogen on crystallization and formation of Si nanoclusters was studied. Regimes for pulse laser crystallization of amorphous Si nanoclusters and nanolayers were found. This approach is applicable for the creation of dielectric films with semiconductor nanoclusters and silicon nanostructured films on non-refractory substrates for all-silicon tandem solar cells.
Paper Details
Date Published: 3 January 2013
PDF: 10 pages
Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 870008 (3 January 2013); doi: 10.1117/12.2016834
Published in SPIE Proceedings Vol. 8700:
International Conference Micro- and Nano-Electronics 2012
Alexander A. Orlikovsky, Editor(s)
PDF: 10 pages
Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 870008 (3 January 2013); doi: 10.1117/12.2016834
Show Author Affiliations
V. A. Volodin, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
S. A. Arzhannikova, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
Novosibirsk State Univ. (Russian Federation)
A. A. Gismatulin, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
Novosibirsk State Univ. (Russian Federation)
G. N. Kamaev, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
Novosibirsk State Univ. (Russian Federation)
A. Kh. Antonenko, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
Novosibirsk State Univ. (Russian Federation)
S. G. Cherkova, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
Novosibirsk State Univ. (Russian Federation)
S. A. Arzhannikova, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
Novosibirsk State Univ. (Russian Federation)
A. A. Gismatulin, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
Novosibirsk State Univ. (Russian Federation)
G. N. Kamaev, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
Novosibirsk State Univ. (Russian Federation)
A. Kh. Antonenko, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
Novosibirsk State Univ. (Russian Federation)
S. G. Cherkova, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
Novosibirsk State Univ. (Russian Federation)
A. G. Cherkov, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
Novosibirsk State Univ. (Russian Federation)
S. A. Kochubei, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
A. A. Popov, Yaroslavl Dept. of IPT (Russian Federation)
S. Robert, Institut Jean Lamour, CNRS, Nancy Univ. (France)
H. Rinnert, Institut Jean Lamour, CNRS, Nancy Univ. (France)
M. Vergnat, Institut Jean Lamour, CNRS, Nancy Univ. (France)
Novosibirsk State Univ. (Russian Federation)
S. A. Kochubei, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
A. A. Popov, Yaroslavl Dept. of IPT (Russian Federation)
S. Robert, Institut Jean Lamour, CNRS, Nancy Univ. (France)
H. Rinnert, Institut Jean Lamour, CNRS, Nancy Univ. (France)
M. Vergnat, Institut Jean Lamour, CNRS, Nancy Univ. (France)
Published in SPIE Proceedings Vol. 8700:
International Conference Micro- and Nano-Electronics 2012
Alexander A. Orlikovsky, Editor(s)
© SPIE. Terms of Use
