Paper presents a new technology for silicon micromachined gyroscope mode matching with mutually spaced eigenfrequencies. The fabrication of gyroscope sensing element is based on double-sided deep reactive ion etching (DRIE) of standard silicon wafer and allows full 3D control of the gimbals and flexures geometry. The developed finite element model allows predicting dynamic characteristics of sensing element versus geometry of flexible suspension beams. Oxidation and successive wet etching of SiO2 layer lead to flexure geometry change (thinning). One-to-one correspondence of measured resonant frequencies and flexures geometry defines the oxidation depth. The mode matching condition is achieved by repeated oxidation-wet etching cycles.

Date Published: 8 January 2013
PDF: 10 pages
Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000T (8 January 2013); doi: 10.1117/12.2016784

Published in SPIE Proceedings Vol. 8700:
International Conference Micro- and Nano-Electronics 2012
Alexander A. Orlikovsky, Editor(s)