In the paper the nanoelectronic devices based on the resonant tunneling effect are analyzed. In particular, the currentvoltage characteristics of resonant-tunneling diodes (RTD’s) based on Si/Ge, Si/SiGe heterostructures and based on carbon nanotubes (CNT) are calculated using proposed models. The first combined two-band model [1, 2] for calculation of RTD characteristics with account of valence band influence is modified for the case of account of quantum well width deviation. The combined numerical model of RTD is based on the self-consistent solution of Poisson and Schrödinger equations. The developed model provides good agreement with experimental data at room temperature. In the paper the results of simulation according to the proposed model for double-barrier Si/Ge, Si/SiGe RTD’s are obtained. The second and third models for RTD based on CNT are presented. The second model is a simple analytical one. The results of simulation according to this model for devices based on CNT are presented for different values of Fermi energy level. The Fermi energy level depends on the material used for contact system. The third model is a self-consistent one. Comparison of analytical model and self-consistent one is presented. A good agreement of simulation results was obtained only at small voltages. IV-characteristics with larger values of peak current and peak voltages were obtained with the use of the third numerical model. Thus the second model can be only used for rough estimations of characteristics of RTD based on CNT.

Date Published: 8 January 2013
PDF: 8 pages
Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 870013 (8 January 2013); doi: 10.1117/12.2016758

Published in SPIE Proceedings Vol. 8700:
International Conference Micro- and Nano-Electronics 2012
Alexander A. Orlikovsky, Editor(s)