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Proceedings Paper

Multiwafer production of epitaxy-ready 4" GaSb: substrate performance assessments pre- and post-epitaxial growth
Author(s): Mark J. Furlong; Rebecca Martinez; Sasson Amirhaghi; Andrew Mowbray; Brian Smith; Dmitri Lubyshev; Joel M. Fastenau; Amy W. K. Liu
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Paper Abstract

Bulk 4" GaSb crystal growth methods based on the Czochralski technique are detailed which deliver highly mono-crystalline substrates that are characterized by low dislocation densities. The latest developments in epitaxy-ready surface finishing will be described and results presented for 4” GaSb substrates processed on a large format, commercial multiwafer polishing platform. Bulk material quality assessments will be made and the surface condition of bare substrates and epitaxial material grown on top of 4" GaSb substrates will be assessed by various surface analytical techniques. We will comment on the available production capacity for 4" GaSb and remark on the scaling challenges that will be required to support the anticipated increase in demand for large diameter GaSb substrates.

Paper Details

Date Published: 11 June 2013
PDF: 10 pages
Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 870411 (11 June 2013); doi: 10.1117/12.2016681
Show Author Affiliations
Mark J. Furlong, Wafer Technology Ltd. (IQE Plc) (United Kingdom)
Rebecca Martinez, Wafer Technology Ltd. (IQE Plc) (United Kingdom)
Sasson Amirhaghi, Wafer Technology Ltd. (IQE Plc) (United Kingdom)
Andrew Mowbray, Wafer Technology Ltd. (IQE Plc) (United Kingdom)
Brian Smith, Wafer Technology Ltd. (IQE Plc) (United Kingdom)
Dmitri Lubyshev, IQE Inc. (IQE Plc) (United States)
Joel M. Fastenau, IQE Inc. (IQE Plc) (United States)
Amy W. K. Liu, IQE Inc. (IQE Plc) (United States)

Published in SPIE Proceedings Vol. 8704:
Infrared Technology and Applications XXXIX
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton; Patrick Robert, Editor(s)

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