Share Email Print

Proceedings Paper

Effects of radiation-induced defects on the charge collection efficiency of a silicon carbide particle detector
Author(s): Naoya Iwamoto; Shinobu Onoda; Takahiro Makino; Takeshi Ohshima; Kazutoshi Kojima; Shinji Nozaki
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Radiation hardness of 6H silicon carbide (SiC) p+n diode particle detectors has been studied. The charge collection efficiency (CCE) of the detectors decreases with the increased fluence of electrons with energies of 0.2 MeV and higher. Defect X2 with an activation energy of 0.5 eV was found in all detectors which showed the decreased CCE. The decreased CCE was restored to the initial value by thermal annealing of defect X2. It is concluded that defect X2 is responsible for the decreased CCE of 6H-SiC p+n diode particle detectors.

Paper Details

Date Published: 29 May 2013
PDF: 8 pages
Proc. SPIE 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V, 87252G (29 May 2013); doi: 10.1117/12.2016464
Show Author Affiliations
Naoya Iwamoto, Japan Atomic Energy Agency (Japan)
Shinobu Onoda, Japan Atomic Energy Agency (Japan)
Takahiro Makino, Japan Atomic Energy Agency (Japan)
Takeshi Ohshima, Japan Atomic Energy Agency (Japan)
Kazutoshi Kojima, National Institute of Advanced Industrial Science and Technology (Japan)
Shinji Nozaki, The Univ. of Electro-Communications (Japan)

Published in SPIE Proceedings Vol. 8725:
Micro- and Nanotechnology Sensors, Systems, and Applications V
Thomas George; M. Saif Islam; Achyut K. Dutta, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?