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Proceedings Paper

Reduction of dark current density by five orders at high bias and enhanced multicolour photo response at low bias for quaternary alloy capped InGaAs/ GaAs QDIPs, when implanted with low-energy light (H-) ions
Author(s): Arjun Mandal; H. Ghadi; Goma Kumari K. C.; A. Basu; N. B. V. Subrahmanyam; P. Singh; S. Chakrabarti
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Paper Abstract

Considering the importance of In(Ga)As/GaAs QDIPs, a post-growth method had been developed for enhancing QDIP characteristics using low energy light ion (H-) implantation. Dark current density was reduced by about five orders for the implanted devices due to the reduction in field assisted tunneling process for dark current generation, even at a very high bias of operation. Stronger multicolor mid wavelength photo response (~5.6 µm) was achieved at a very low bias of operation for the implanted device.

Paper Details

Date Published: 18 June 2013
PDF: 8 pages
Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 870435 (18 June 2013); doi: 10.1117/12.2016299
Show Author Affiliations
Arjun Mandal, Indian Institute of Technology Bombay (India)
H. Ghadi, Indian Institute of Technology Bombay (India)
Goma Kumari K. C., Indian Institute of Technology Bombay (India)
A. Basu, Bhabha Atomic Research Ctr. (India)
N. B. V. Subrahmanyam, Bhabha Atomic Research Ctr. (India)
P. Singh, Bhabha Atomic Research Ctr. (India)
S. Chakrabarti, Indian Institute of Technology Bombay (India)

Published in SPIE Proceedings Vol. 8704:
Infrared Technology and Applications XXXIX
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton; Patrick Robert, Editor(s)

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