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Proceedings Paper

Active frequency selective surfaces
Author(s): Walter R. Buchwald; Joshua Hendrickson; Justin W. Cleary; Junpeng Guo
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Paper Abstract

Split ring resonator arrays are investigated for use as active elements for the realization of voltage controllable frequency selective surfaces. Finite difference time domain simulations suggest the absorptive and reflective properties of such surfaces can be externally controlled through modifications of the split ring resonator gap impedance. In this work, such voltage-controlled resonance tuning is obtained through the addition of an appropriately designed high electron mobility transistor positioned across the split ring resonator gap. It is shown that a 0.5μm gate length high electron mobility transistor allows voltage controllable switching between the two resonant conditions associated with a split ring resonator and that of a closed loop geometry when the surface is illuminated with THz radiation. Partial switching between these two resonant conditions is observed at larger gate lengths. Such active frequency selective surfaces are proposed, for example, for use as modulators in THz detection schemes and as RF filters in radar applications when scaled to operate at GHz frequencies.

Paper Details

Date Published: 29 May 2013
PDF: 8 pages
Proc. SPIE 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V, 87250A (29 May 2013); doi: 10.1117/12.2016081
Show Author Affiliations
Walter R. Buchwald, Univ. of Massachusetts, Boston (United States)
Solid State Scientific Corp. (United States)
Joshua Hendrickson, Air Force Research Lab. (United States)
Justin W. Cleary, Air Force Research Lab. (United States)
Junpeng Guo, The Univ. of Alabama in Huntsville (United States)

Published in SPIE Proceedings Vol. 8725:
Micro- and Nanotechnology Sensors, Systems, and Applications V
Thomas George; M. Saif Islam; Achyut K. Dutta, Editor(s)

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