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Proceedings Paper

Crosstalk analysis in large-area low-capacitance InGaAs quad photodiodes
Author(s): Shubhashish Datta; Abhay Joshi; Jim Rue
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Paper Abstract

We report crosstalk in 1 mm diameter and 2 mm diameter quad InGaAs photodiodes having quadrant-to-quadrant separation of 15 μm, 20 μm, and 25 μm. This crosstalk is a combination of resistive and capacitive coupling between the photodiode quadrants and varies widely on the combination on device diameter, quadrant-to-quadrant separation, illumination conditions, and modulation frequency. Thus, the position sensing accuracy is heavily influenced by the operating conditions of the quad photodiode.

Paper Details

Date Published: 11 June 2013
PDF: 11 pages
Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 870408 (11 June 2013); doi: 10.1117/12.2015609
Show Author Affiliations
Shubhashish Datta, Discovery Semiconductors, Inc. (United States)
Abhay Joshi, Discovery Semiconductors, Inc. (United States)
Jim Rue, Discovery Semiconductors, Inc. (United States)

Published in SPIE Proceedings Vol. 8704:
Infrared Technology and Applications XXXIX
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton; Patrick Robert, Editor(s)

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