Proceedings Paper
Effects of x-ray and gamma-ray irradiation on the optical properties of quantum dots immobilized in porous silicon| Format | Member Price | Non-Member Price |
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Paper Abstract
The effects of X-ray and gamma irradiation on the optical properties of CdTe/CdS quantum dots (QDs) immobilized in a functionalized porous silicon film have been investigated via continuous wave and time-resolved photoluminescence measurements. Carrier lifetimes of the QDs and photoluminescence intensities decrease with increasing exposure dose from 500 krad(SiO2) to 16 Mrad(SiO2).
Paper Details
Date Published: 29 May 2013
PDF: 8 pages
Proc. SPIE 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V, 87252D (29 May 2013); doi: 10.1117/12.2015595
Published in SPIE Proceedings Vol. 8725:
Micro- and Nanotechnology Sensors, Systems, and Applications V
Thomas George; M. Saif Islam; Achyut K. Dutta, Editor(s)
PDF: 8 pages
Proc. SPIE 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V, 87252D (29 May 2013); doi: 10.1117/12.2015595
Show Author Affiliations
Girija Gaur, Vanderbilt Univ. (United States)
Dmitry Koktysh, Vanderbilt Univ. (United States)
Daniel M. Fleetwood, Vanderbilt Univ. (United States)
Dmitry Koktysh, Vanderbilt Univ. (United States)
Daniel M. Fleetwood, Vanderbilt Univ. (United States)
Robert A. Reed, Vanderbilt Univ. (United States)
Robert A. Weller, Vanderbilt Univ. (United States)
Sharon M. Weiss, Vanderbilt Univ. (United States)
Robert A. Weller, Vanderbilt Univ. (United States)
Sharon M. Weiss, Vanderbilt Univ. (United States)
Published in SPIE Proceedings Vol. 8725:
Micro- and Nanotechnology Sensors, Systems, and Applications V
Thomas George; M. Saif Islam; Achyut K. Dutta, Editor(s)
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