
Proceedings Paper
Thiol passivation of MWIR type II superlattice photodetectorsFormat | Member Price | Non-Member Price |
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Paper Abstract
Poor passivation on photodetectors can result in catastrophic failure of the device. Abrupt termination of mesa
side walls during pixel definition generates dangling bonds that lead to inversion layers and surface traps leading
to surface leakage currents that short circuit diode action. Good passivation, therefore, is critical in the
fabrication of high performance devices. Silicondioxide has been the main stay of passivation for commercial
photodetectors, deposited at high temperatures and high RF powers using plasma deposition techniques. In
photodetectors based on III-V compounds, sulphur passivation has been shown to replace oxygen and saturate
the dangling bonds. Despite its effectiveness, it degrades over time. More effort is required to create passivation
layers which eliminate surface leakage current. In this work, we propose the use of sulphur based
octadecanethiol (ODT), CH3(CH2)17SH, as a passivation layer for the InAs/GaSb superlattice photodetectors that
acts as a self assembled monolayer (SAM). ODT SAMs consist of a chain of 18 carbon atoms with a sulphur
atom at its head. ODT Thiol coating is a simple process that consist of dipping the sample into the solution for a
prescribed time. Excellent electrical performance of diodes tested confirm the effectiveness of the sulphur head
stabilized by the intermolecular interaction due to van der Walls forces between the long chains of ODT SAM
which results in highly stable ultrathin hydrocarbon layers without long term degradation.
Paper Details
Date Published: 11 June 2013
PDF: 6 pages
Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87040T (11 June 2013); doi: 10.1117/12.2015521
Published in SPIE Proceedings Vol. 8704:
Infrared Technology and Applications XXXIX
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton; Patrick Robert, Editor(s)
PDF: 6 pages
Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87040T (11 June 2013); doi: 10.1117/12.2015521
Show Author Affiliations
A. Aydinli, Bilkent Univ. (Turkey)
Published in SPIE Proceedings Vol. 8704:
Infrared Technology and Applications XXXIX
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton; Patrick Robert, Editor(s)
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