
Proceedings Paper
Electron-beam lithography: directions in direct write and mask makingFormat | Member Price | Non-Member Price |
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Paper Abstract
Two major categories of electron beam lithography systems have been developed over the
course of many years: Direct write of chips on silicon, and patterning of optical masks on
quartz and glass substrates. This paper addresses this dual role and what it implies for the
different classes of electron beam lithography tools. In direct write, with dimensions at and
below 0.25 m, tool resolution, accuracy in registration and overlay, process integration, and
other factors are of critical importance. Most recent advances in this area will be described.
Current work on device fabrication below 0.25 ,um demonstrates the capability to integrate all
sectors of electron beam lithography to provide early research work for ULSI device technology
demonstration. These dimensions are necessary for the fabrication of 256 MB DRAM chips,
for example.
For mask making it is widely ackowledged that much of the learning from direct write electron
beam lithography tools becomes applicable to mask patterning as well. However, more stringent
requirements are burdened in particular on x - y stage accuracy and long term overall
systems stability.
Paper Details
Date Published: 1 May 1990
PDF: 12 pages
Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); doi: 10.1117/12.20155
Published in SPIE Proceedings Vol. 1263:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX
Douglas J. Resnick, Editor(s)
PDF: 12 pages
Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); doi: 10.1117/12.20155
Show Author Affiliations
Fritz J. Hohn, IBM/Thomas J. Watson Research (United States)
Published in SPIE Proceedings Vol. 1263:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX
Douglas J. Resnick, Editor(s)
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