
Proceedings Paper
Advances in AlGaInN laser diode technology for defence applicationsFormat | Member Price | Non-Member Price |
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Paper Abstract
The latest developments in AlGaInN laser diode technology are reviewed. The AlGaInN material
system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v. to
the visible, i.e., 380-530nm, by tuning the indium content of the laser GaInN quantum well. Of
specific interest for defence applications is blue-green laser diode technology for underwater
telecommunications and sensing applications.
Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical
powers of <100mW in the 400-420nm wavelength range with high reliability. Low defectivity and
highly uniform GaN-substrates allow arrays and bars of nitride lasers to be fabricated. In addition,
high power operation of AlGaInN laser diodes is demonstrated with the operation of a single chip,
‘mini-array’ consisting of a 3 stripe common p-contact at powers up to 2.5W cw in the 408-412 nm
wavelength range and a 16 stripe common p-contact laser array at powers over 4W cw.
Paper Details
Date Published: 23 May 2013
PDF: 8 pages
Proc. SPIE 8733, Laser Technology for Defense and Security IX, 873302 (23 May 2013); doi: 10.1117/12.2014753
Published in SPIE Proceedings Vol. 8733:
Laser Technology for Defense and Security IX
Mark Dubinskii; Stephen G. Post, Editor(s)
PDF: 8 pages
Proc. SPIE 8733, Laser Technology for Defense and Security IX, 873302 (23 May 2013); doi: 10.1117/12.2014753
Show Author Affiliations
S. P. Najda, TopGaN Ltd. (Poland)
P. Perlin, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
T. Suski, Institute of High Pressure Physics (Poland)
L. Marona, Institute of High Pressure Physics (Poland)
M. Boćkowski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
M. Leszczyński, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
P. Perlin, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
T. Suski, Institute of High Pressure Physics (Poland)
L. Marona, Institute of High Pressure Physics (Poland)
M. Boćkowski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
M. Leszczyński, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
A. Kafar, Institute of High Pressure Physics (Poland)
S. Stanczyk, Institute of High Pressure Physics (Poland)
P. Wisniewski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
R. Czernecki, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
R. Kucharski, Ammono S. A. (Poland)
G. Targowski, TopGaN Ltd. (Poland)
S. Stanczyk, Institute of High Pressure Physics (Poland)
P. Wisniewski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
R. Czernecki, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
R. Kucharski, Ammono S. A. (Poland)
G. Targowski, TopGaN Ltd. (Poland)
Published in SPIE Proceedings Vol. 8733:
Laser Technology for Defense and Security IX
Mark Dubinskii; Stephen G. Post, Editor(s)
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