This paper presents the design and measured results of a highly integrated silicon-based receiver chip for W-band imaging applications. The receiver chip integrates all necessary RF and analog functions including millimeter-wave amplification and power detection, baseband amplification, sample-and-hold, clock generation, imager calibration, bias generation, and digital control. Using a novel flicker-noise cancellation technique, the imaging receiver achieves a record NETD of 0.22K/0.15K/0.1K for 3ms/10ms/30ms integration time, and a responsivity of 140 MV/W. The chip is fabricated in a 0.18-µm SiGe BiCMOS technology with 240/280-GHz f_T/f_max and occupies 2.5mm×2.5mm. The power dissipation of the receiver is 40 mW.

Date Published: 31 May 2013
PDF: 5 pages
Proc. SPIE 8715, Passive and Active Millimeter-Wave Imaging XVI, 871504 (31 May 2013); doi: 10.1117/12.2014717

Published in SPIE Proceedings Vol. 8715:
Passive and Active Millimeter-Wave Imaging XVI
David A. Wikner; Arttu R. Luukanen, Editor(s)