Share Email Print

Proceedings Paper

Advanced electron beam resist requirements and challenges
Author(s): Andrew Jamieson; Bennett Olson; Maiying Lu; Nathan Wilcox
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Electron beam resists are critical to photomask production and have significant impacts on advanced semiconductor manufacturing. In this paper, we’ll discuss current and future challenges in electron beam resist development. These materials face many of the same issues as EUV resists, especially in their tradeoffs between resolution, dose and LER. However, electron beam exposure creates unique complications associated with backscattered electrons and charging. We’ll investigate these effects and the requirements and challenges that result.

Paper Details

Date Published: 29 March 2013
PDF: 9 pages
Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86820Y (29 March 2013); doi: 10.1117/12.2014527
Show Author Affiliations
Andrew Jamieson, Intel Corp. (United States)
Bennett Olson, Intel Corp. (United States)
Maiying Lu, Intel Corp. (United States)
Nathan Wilcox, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 8682:
Advances in Resist Materials and Processing Technology XXX
Mark H. Somervell, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?