Electron beam resists are critical to photomask production and have significant impacts on advanced semiconductor manufacturing. In this paper, we’ll discuss current and future challenges in electron beam resist development. These materials face many of the same issues as EUV resists, especially in their tradeoffs between resolution, dose and LER. However, electron beam exposure creates unique complications associated with backscattered electrons and charging. We’ll investigate these effects and the requirements and challenges that result.

Date Published: 29 March 2013
PDF: 9 pages
Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86820Y (29 March 2013); doi: 10.1117/12.2014527

Published in SPIE Proceedings Vol. 8682:
Advances in Resist Materials and Processing Technology XXX
Mark H. Somervell, Editor(s)