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Proceedings Paper • Open Access

The evolving complexity of patterning materials
Author(s): Tsutomu Shimokawa; Yoshi Hishiro; Yoshikazu Yamaguchi; Motoyuki Shima; Tooru Kimura; Yoshio Takimoto; Tomoki Nagai

Paper Abstract

People have enjoyed innovations which are made possible with the device scaling. The industry has been challenging to realize the Moore’s Law. Resolution limit of ArF immersion scanner has already been larger than the device CD necessary now. Device structures have been getting more and more complicated to meet various technology requirements such as scaling, device speed, low power consumption and so on. Not only the scaling but also complication has to be overcome to realize those requirements. Scaling requirements, device structure, and new types of architectures for new generation device with the limited single exposure capability force us to keep using and exploring complicated multi-step patterning techniques or “tricks”. Device design, elements, process, and consumable tricks and JSR’s solution have been reviewed.

Paper Details

Date Published: 10 April 2013
PDF: 6 pages
Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 868202 (10 April 2013); doi: 10.1117/12.2014526
Show Author Affiliations
Tsutomu Shimokawa, JSR Corp. (Japan)
Yoshi Hishiro, JSR Micro, Inc. (United States)
Yoshikazu Yamaguchi, JSR Corp. (Japan)
Motoyuki Shima, JSR Corp. (Japan)
Tooru Kimura, JSR Corp. (Japan)
Yoshio Takimoto, JSR Corp. (Japan)
Tomoki Nagai, JSR Corp. (Japan)

Published in SPIE Proceedings Vol. 8682:
Advances in Resist Materials and Processing Technology XXX
Mark H. Somervell, Editor(s)

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