A 25 key focused Ga ion beam was used to induce deposition of tungsten on a gold absorber on boron nitride X-ray mask with submicron features to simulate the repair of clear defects. Tungsten was deposited to fill holes, extend lines and add missing features, such as isolated contacts and lines. Deposits were placed between features and made to cross over both gold and tungsten features to evaluate proximity effects. Series of tungsten depositions that varied in thickness were exposed to an X-ray source and transferred into resist. Contrast equivalent to or better than the gold absorber was achieved for tungsten that was thinner than the gold.

Date Published: 1 May 1990
PDF: 14 pages
Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); doi: 10.1117/12.20142

Published in SPIE Proceedings Vol. 1263:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX
Douglas J. Resnick, Editor(s)