
Proceedings Paper
Contrast enhanced exposure strategy in multi-beam mask writingFormat | Member Price | Non-Member Price |
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Paper Abstract
Since multi electron beam exposure has become a serious contender for next generation mask making, proximity- and
process effect corrections (PEC) need to be adapted to this technology. With feature sizes in the order of the short-range
blurs (resist and tool), contrast enhancements need to be combined with standard linearity corrections. Different PEC
strategies are reviewed and compared with respect to their suitability for multi-beam exposure. This analysis
recommends a hybrid approach that combines the benefits of shape- and dose PEC and is optimally applicable for multibeam
exposure. Exposure results on the proof-of-concept 50keV electron multi-beam mask exposure tool (eMET POC) and a standard
50 kV vector shaped beam tool (VSB) are shown to verify that the combined PEC with overdose contrast enhancement
covers the whole pattern range from isolated to opaque.
Paper Details
Date Published: 26 March 2013
PDF: 7 pages
Proc. SPIE 8680, Alternative Lithographic Technologies V, 86802A (26 March 2013); doi: 10.1117/12.2014148
Published in SPIE Proceedings Vol. 8680:
Alternative Lithographic Technologies V
William M. Tong, Editor(s)
PDF: 7 pages
Proc. SPIE 8680, Alternative Lithographic Technologies V, 86802A (26 March 2013); doi: 10.1117/12.2014148
Show Author Affiliations
Published in SPIE Proceedings Vol. 8680:
Alternative Lithographic Technologies V
William M. Tong, Editor(s)
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