Proceedings Paper
Model for focused ion beam deposition| Format | Member Price | Non-Member Price |
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Paper Abstract
A model of focused ion beam deposition of materials is described. Decomposition of
organometallic molecules by ion beams 50-300 nm in diameter allow localized deposition
of a variety of metals. The large current density (approximately I A/cm2) and
the inherent sputtering of a focused ion beam can result in no net deposition for a
variety of process conditions. The major process parameters of current density, beam
dwell time, and readsorption time are introduced. Experimental examples of gold
depositions from dimethylgold hexafluoro acetylacetonate or DMG(hfac) are presented
to illustrate the effect of the process parameters on size and shape of the
depositions.
Paper Details
Date Published: 1 May 1990
PDF: 10 pages
Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); doi: 10.1117/12.20140
Published in SPIE Proceedings Vol. 1263:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX
Douglas J. Resnick, Editor(s)
PDF: 10 pages
Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); doi: 10.1117/12.20140
Show Author Affiliations
James P. Levin, IBM Corp. (United States)
Patricia G. Blauner, IBM Corp. (United States)
Patricia G. Blauner, IBM Corp. (United States)
Alfred Wagner, IBM Corp. (United States)
Published in SPIE Proceedings Vol. 1263:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX
Douglas J. Resnick, Editor(s)
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