
Proceedings Paper
Direct electron beam patterning of sub-5nm monolayer graphene interconnectsFormat | Member Price | Non-Member Price |
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Paper Abstract
The industry’s march towards higher transistor density has called for an ever-increasing number of interconnect levels in
logic devices. The historic transition from aluminum to copper was necessary in reducing timing delays while future
technology nodes presents an opportunity for new materials and patterning techniques. One material for consideration is
graphene, a single atomic layer of carbon atoms. Graphene is known to have excellent electrical properties [1], driving
strong interest in its integration into the wafer fabrication processes for future electronics [2], and its ballistic transport
properties give promise for use in on-chip interconnects [3]. This study demonstrates the feasibility of a direct electron
beam lithography technique to pattern sub-5nm metallic graphene ribbons, without using a mask or photoresist, to act as
next generation interconnects. Sub-5nm monolayer and multilayer graphene ribbons were patterned using a focused
electron beam in a transmission electron microscope (TEM) through direct knock-on ejection of carbon atoms. These
ribbons were measured during fabrication to quantify their electrical performance. Multilayered graphene nanoribbons
were found to sustain current densities in excess of 109 A/cm2, orders of magnitude higher than copper, while monolayer
graphene provides comparable performance to copper but at the level of a single atomic layer. High volume manufacturing
could utilize wafer-size chemical vapor deposition (CVD) graphene [4] transferred directly onto the substrate paired with
a direct write multi-beam tool to knock off carbon atoms for patterning of nanometer sized interconnects. The patterning
technique introduced here allows for the fabrication of small foot-print high performance next generation graphene
interconnects that bypass the use of a mask and resist process.
Paper Details
Date Published: 26 March 2013
PDF: 6 pages
Proc. SPIE 8680, Alternative Lithographic Technologies V, 86802F (26 March 2013); doi: 10.1117/12.2013724
Published in SPIE Proceedings Vol. 8680:
Alternative Lithographic Technologies V
William M. Tong, Editor(s)
PDF: 6 pages
Proc. SPIE 8680, Alternative Lithographic Technologies V, 86802F (26 March 2013); doi: 10.1117/12.2013724
Show Author Affiliations
Zhengqing John Qi, Univ. of Pennsylvania (United States)
Julio A. Rodríguez-Manzo, Univ. of Pennsylvania (United States)
Sung Ju Hong, Univ. of Pennsylvania (United States)
Seoul National Univ. (Korea, Republic of)
Yung Woo Park, Seoul National Univ. (Korea, Republic of)
Julio A. Rodríguez-Manzo, Univ. of Pennsylvania (United States)
Sung Ju Hong, Univ. of Pennsylvania (United States)
Seoul National Univ. (Korea, Republic of)
Yung Woo Park, Seoul National Univ. (Korea, Republic of)
Eric A. Stach, Brookhaven National Lab. (United States)
Marija Drndić, Univ. of Pennsylvania (United States)
A. T. Charlie Johnson, Univ. of Pennsylvania (United States)
Marija Drndić, Univ. of Pennsylvania (United States)
A. T. Charlie Johnson, Univ. of Pennsylvania (United States)
Published in SPIE Proceedings Vol. 8680:
Alternative Lithographic Technologies V
William M. Tong, Editor(s)
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