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Proceedings Paper

STT MRAM patterning challenges
Author(s): Werner Boullart; Dunja Radisic ; Vasile Paraschiv; Sven Cornelissen; Mauricio Manfrini; Koichi Yatsuda; Eiichi Nishimura; Tetsuya Ohishi; Shigeru Tahara
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Paper Abstract

In this paper we report on the patterning challenges for the integration of Spin-Transfer Torque Magneto-Resistive- Random-Access Memory (STT MRAM). An overview of the different patterning approaches that have been evaluated in the past decade is presented. Plasma based etching, wet echting, but also none subtractive pattering approaches are covered. The paper also reports on the patterning strategies, currently under investigation at imec.

Paper Details

Date Published: 29 March 2013
PDF: 9 pages
Proc. SPIE 8685, Advanced Etch Technology for Nanopatterning II, 86850F (29 March 2013); doi: 10.1117/12.2013602
Show Author Affiliations
Werner Boullart, IMEC (Belgium)
Dunja Radisic , IMEC (Belgium)
Vasile Paraschiv, Etch Tech Solutions (Romania)
Sven Cornelissen, IMEC (Belgium)
Mauricio Manfrini, IMEC (Belgium)
Koichi Yatsuda, Tokyo Electron Ltd. (Japan)
Eiichi Nishimura, Tokyo Electron Miyagi Ltd. (Japan)
Tetsuya Ohishi, Tokyo Electron Miyagi Ltd. (Japan)
Shigeru Tahara, Tokyo Electron Miyagi Ltd. (Japan)

Published in SPIE Proceedings Vol. 8685:
Advanced Etch Technology for Nanopatterning II
Ying Zhang; Gottlieb S. Oehrlein; Qinghuang Lin, Editor(s)

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