Share Email Print

Proceedings Paper

Very thin multicomponent resists prepared by Langmuir-Blodgett techniques
Author(s): Laura L. Kosbar; Curtis W. Frank; Roger Fabian W. Pease
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Langmuir-Blodgett (LB) techniques can be used to prepare very thin organic films, and we have investigated their use in lithographic applications. Resist films were prepared usmg novolac and poly(p-hydroxystyrene) resins and both near and deep UV sensitive photoactive compounds (PAC). LB resist films formed from mixtures of polymer and PAC behaved lithographically in a similar fashion to spin cast films. LB films as thin as 300 A were sufficient to protect 500 A of chromium during wet chemical etching. Initial attempts to use LB films as the top layer in a bilayer resist system indicated that silylation of the LB films may yield etch rate ratios of up to 10: 1 vs hard baked novolac. Investigation of the "sphere of influence" of PAC molecules by controlling their distribution throughout the film indicates that strong interactions may exist between consecutive LB layers of PAC. LB films may also be useful for modifying the surface concentration of PAC.

Paper Details

Date Published: 1 June 1990
PDF: 8 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20132
Show Author Affiliations
Laura L. Kosbar, Stanford Univ. (United States)
Curtis W. Frank, Stanford Univ. (United States)
Roger Fabian W. Pease, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

© SPIE. Terms of Use
Back to Top