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Proceedings Paper

I-line photolithography: an investigation of resist bleachability and process performance
Author(s): Giorgio A. L. M. Degiorgis; Patrizia Pateri; Alberto Pilenga; Rodney J. Hurditch; Bernard T. Beauchemin Jr.; Edward A. Fitzgerald III
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Paper Abstract

The present work presents an investigation of the characteristics of a broad band capability photoresist in terms of photo-active compound (PAC) bleachability and process performances. The difference in performance on exposure to 436 and 365 nm wavelengths of a commercially available photoresist, Olin Hunt H1PR-6512, has been evaluated as a function of some typical lithographic parameters by using FT-IR spectroscopy and actinometry. This analysis contributed to the development of a submicron I-line process, which in conclusion is shown in a production environment application.

Paper Details

Date Published: 1 June 1990
PDF: 10 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20129
Show Author Affiliations
Giorgio A. L. M. Degiorgis, SGS-Thomson Microelectronics (Italy)
Patrizia Pateri, SGS-Thomson Microelectronics (Italy)
Alberto Pilenga, SGS-Thomson Microelectronics (Italy)
Rodney J. Hurditch, Olin Hunt Specialty Products I (United States)
Bernard T. Beauchemin Jr., Olin Hunt Specialty Products I (United States)
Edward A. Fitzgerald III, Olin Hunt Specialty Products I (United States)

Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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