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Proceedings Paper

Simulation analysis of LER and dose tradeoffs for EUV resists with photo-decomposable quenchers
Author(s): Suchit Bhattarai; Andrew R. Neureuther; Patrick P. Naulleau
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Paper Abstract

The SuMMIT stochastic simulator has been used to conduct a simulation study of photo-decomposable quencher (PDQ) based EUV resists and performance comparison between PDQ resists and conventional quencher (regQ) resists analyzed from the standpoint of dose and LER metrics. The dose and LER Tradeoffs have been analyzed as a function of base loading, base diffusion lengths and relative deprotection/quenching rates. About 3.5% LER improvements with PDQ has been predicted at a dose of 15 mJ/cm2 with base loaded at 20% of PAG loading, for 25 nm half-pitch line-space patterns. Dose savings of 2 mJ/cm2 and LER improvement of 0.1 nm between regQ and PDQ resists are predicted with a base diffusion length equal to the acid diffusion length of 10 nm, and base loaded at 30% of PAG loading. Dose improvements of 1 mJ/cm2 for equal regQ and PDQ LERs of 3.5 nm is possible at a deprotection rate that is half as fast as the acid/base quenching rate of 10 nm3/s. Improvement in the deprotection gradient is found to be the dominant factor behind lower PDQ LERs, while the difference in deprotection noise between conventional quenchers and PDQs is found to be marginal.

Paper Details

Date Published: 1 April 2013
PDF: 10 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867925 (1 April 2013); doi: 10.1117/12.2012669
Show Author Affiliations
Suchit Bhattarai, Univ. of California, Berkeley (United States)
Lawrence Berkeley National Lab. (United States)
Andrew R. Neureuther, Univ. of California, Berkeley (United States)
Lawrence Berkeley National Lab. (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)

Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)

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