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Proceedings Paper

ANR photoresist process optimization at 248 nm
Author(s): Christophe Pierrat; Francoise Vinet; Thierry Mourier; James W. Thackeray
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Paper Abstract

The purpose of this article is to propose a residue-free process using ANR resists specifically designed for deep UV lithography. The influence of development steps, process conditions and resist formulation on residues were studied. An optimized process point with a new resist formulation is proposed. Using this residue-free process point, very high resolution was achieved for deep UV and e-beam lithography. Moreover, the temporal effects on the coated wafers were investigated.

Paper Details

Date Published: 1 June 1990
PDF: 11 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20123
Show Author Affiliations
Christophe Pierrat, LETI/CENG (United States)
Francoise Vinet, LETI/CENG (France)
Thierry Mourier, LETI/CENG (France)
James W. Thackeray, Shipley Co., Inc. (United States)

Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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