
Proceedings Paper
0.1-nanometer resolution positioning stage for sub-10 nm scanning probe lithographyFormat | Member Price | Non-Member Price |
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Paper Abstract
High Performance Single Nanometer Lithography (SNL) is an enabling technology for beyond CMOS and future
nanoelectronics. To keep on with scaling down nanoelectronic components, novel instrumentation for nanometer precise
placement, overlay alignment and measurement are an essential pre-requirement to realize Next Generation Lithography
(NGL) systems. In particular, scanning probe based methods for surface modification and lithography are an emerging
method for producing sub-10 nm features. In this study, we demonstrate nano-scale lithography using a scanning probe
based method in combination with a Nanopositioning and Nanomeasuring Machine. The latter one has a measuring
range of 25 mm x 25 mm x 5 mm, 0.1 nanometer resolution and outstanding nanometer accuracy. The basic concept
consists of a special arrangement allowing Abbe error free measurements in all axes over the total scan range.
Furthermore, the Nanopositioning and Nanomeasuring Machine is able to store the exact location that can be found again
with an accuracy of less than 2.5 nanometers. This system is also predestinated for critical dimension, quality and
overlay control. The integrated scanning probe lithography is based on electric-field-induced patterning of calixarene. As
a result, repeated step response tests are presented in this paper.
Paper Details
Date Published: 26 March 2013
PDF: 10 pages
Proc. SPIE 8680, Alternative Lithographic Technologies V, 868018 (26 March 2013); doi: 10.1117/12.2012324
Published in SPIE Proceedings Vol. 8680:
Alternative Lithographic Technologies V
William M. Tong, Editor(s)
PDF: 10 pages
Proc. SPIE 8680, Alternative Lithographic Technologies V, 868018 (26 March 2013); doi: 10.1117/12.2012324
Show Author Affiliations
Nataliya Vorbringer-Doroshovets, Technische Univ. Ilmenau (Germany)
Felix Balzer, Technische Univ. Ilmenau (Germany)
Roland Fuessl, Technische Univ. Ilmenau (Germany)
Eberhard Manske, Technische Univ. Ilmenau (Germany)
Marcus Kaestner, Technische Univ. Ilmenau (Germany)
Andreas Schuh, Technische Univ. Ilmenau (Germany)
Felix Balzer, Technische Univ. Ilmenau (Germany)
Roland Fuessl, Technische Univ. Ilmenau (Germany)
Eberhard Manske, Technische Univ. Ilmenau (Germany)
Marcus Kaestner, Technische Univ. Ilmenau (Germany)
Andreas Schuh, Technische Univ. Ilmenau (Germany)
Jens-Peter Zoellner, Technische Univ. Ilmenau (Germany)
Manuel Hofer, Technische Univ. Ilmenau (Germany)
Elshad Guliyev, Technische Univ. Ilmenau (Germany)
Ahmad Ahmad, Technische Univ. Ilmenau (Germany)
Tzvetan Ivanov , Technische Univ. Ilmenau (Germany)
Ivo W. Rangelow, Technische Univ. Ilmenau (Germany)
Manuel Hofer, Technische Univ. Ilmenau (Germany)
Elshad Guliyev, Technische Univ. Ilmenau (Germany)
Ahmad Ahmad, Technische Univ. Ilmenau (Germany)
Tzvetan Ivanov , Technische Univ. Ilmenau (Germany)
Ivo W. Rangelow, Technische Univ. Ilmenau (Germany)
Published in SPIE Proceedings Vol. 8680:
Alternative Lithographic Technologies V
William M. Tong, Editor(s)
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